STT-RAM (Spin-Transfer Torque Random Access Memory) is a type of non-volatile memory technology that uses the magnetic tunnel junction to store data. In STT-RAM, data is stored by controlling the orientation of the magnetization of the tunnel junction. This technology offers faster read and write speeds, higher endurance, and lower power consumption compared to traditional forms of non-volatile memory like Flash memory. STT-RAM is being actively researched for use in a wide range of applications, including in-memory computing, low-power embedded systems, and high-performance computing.