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Profile
Brian LeRoy
Associate Department Head, Physics | Professor, Physics | Member of the Graduate Faculty
Physics
Overview
Research
More
Collaboration
(25)
Qing Hao
Mutual work: 1 Publication
Collaboration Details
Barrett Potter
Mutual work: 1 Proposal
Collaboration Details
Hao Zhang
Mutual work: 2 Proposals
Collaboration Details
Robert Norwood
Mutual work: 1 Proposal﹒1 Grant
Collaboration Details
Jon Njardarson
Mutual work: 1 Proposal
Collaboration Details
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Grants
(22)
One- and Two-Dimensional Material Probes of Ultraclean Surfaces
Active
·
2022
·
$150K / $300K
·
External
Co-Investigator (COI)
nanostructures,
surface science,
materials characterization,
semiconductors,
atomic structure
DURIP: Upgrade of scanning tunneling microscope to enable qPlus operation
Active
·
2022
·
$112.5K / $225K
·
External
Principal Investigator (PI)
microscopy,
quantum,
nanotechnology,
instrumentation,
material science
Deterministic and Tunable Quantum Dots Based on Bilayer Semiconductor Heterostructures
Active
·
2021
·
$195K / $390K
·
External
Co-Investigator (COI)
quantum dots,
semiconductor heterostructures,
deterministic control,
tunable properties,
bilayer configurations
Collaborative Research: Combined Transport and Scanning Probe Study of Twisted Van Der Waals Devices
Active
·
2021
·
$215K
·
External
Principal Investigator (PI)
nanotechnology,
materials science,
surface physics,
condensed matter physics,
nanoelectronics
Imaging and Controlling Moire Interactions in Two-Dimensional Semiconductor Heterostructures
Active
·
2020
·
$263.9K / $527.8K
·
External
Co-Investigator (COI)
imaging,
semiconductor,
heterostructures,
controlling,
moire interactions
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Publications
(67)
Recent
Single-exciton trapping in an electrostatically defined two-dimensional semiconductor quantum dot
2022
quantum dots,
semiconductor physics,
nanotechnology,
electrostatics,
optoelectronics
Phonon Lifetimes in Boron‐Isotope‐Enriched Graphene‐Hexagonal Boron Nitride Devices
2022
phonon lifetimes,
boron-isotope-enriched,
graphene,
hexagonal boron nitride,
devices
Localized interlayer excitons in MoSe2–WSe2 heterostructures without a moiré potential
2022
heterostructures,
interlayer excitons,
mose2,
wse2,
localized excitons
Direct STM measurements of R-type and H-type twisted MoSe2/WSe2
2022
surface science,
2d materials,
nanotechnology,
materials science,
electronic structure
Interlayer exciton diode and transistor
2022
semiconductor devices,
optoelectronics,
nanotechnology,
electronic materials,
energy conversion
Direct STM Measurements of R- and H-type Twisted MoSe2/WSe2 Heterostructures
2022
Nanoscale Trapping of Interlayer Excitons in a 2D Semiconductor Heterostructure
2021
nanoscale,
interlayer excitons,
2d semiconductor,
heterostructure,
trapping
Coupled 2D Semiconductor-Molecular Excitons with Enhanced Raman Scattering
2020
semiconductor,
2d materials,
excitons,
raman scattering,
molecular
Role of defects and phonons in bandgadynamics of monolayer WS2 at high carrier densities
2020
2d materials,
defects,
phonons,
bandgap dynamics,
high carrier densities
Temperature dependent moiré trapping of interlayer excitons in MoSe2-WSe2 heterostructures
2020
interlayer excitons,
moire trapping,
temperature dependence,
heterostructures,
mose2-wse2